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EFA240BV-100P Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc.

Part No. EFA240BV-100P
Description  Low Distortion GaAs Power FET
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Maker  EXCELICS [Excelics Semiconductor, Inc.]
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EFA240BV-100P Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc.

   
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EFA240BV-100P
ISSUED 09/28/2007
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised September 2007
NON-HERMETIC 100MIL METAL FLANGE PACKAGE
+31.0dBm TYPICAL OUTPUT POWER
8.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (Ta = 25
OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
29.0
31.0
P1dB
Output Power at 1dB Compression
f= 12GHz
VDS=8V, IDS=50% IDSS
f= 18GHz
31.0
dBm
7
8.5
G1dB
Gain at 1dB Compression
f= 12GHz
VDS=8V, IDS=50% IDSS
f= 18GHz
6.0
dB
PAE
Power Added Efficiency at 1dB Compression
VDS=8V, IDS=50% IDSS
f=12GHz
33
%
IDSS
Saturated Drain Current
VDS=3V, VGS=0V
400
680
880
mA
Gm
Transconductance
VDS=3V, VGS=0V
280
360
mS
Vp
Pinch-off Voltage
VDS=3V,IDS=6mA
-2.0
-3.5
V
BVGD
Drain Breakdown Voltage
IGD=2.4mA
-13
-15
V
BVGS
Source Breakdown Voltage
IGS=2.4mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
15
ºC/W
Note: * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
OC
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
VDS
Drain-Source Voltage
12V
8V
VGS
Gate-Source Voltage
-8V
-4V
Igf
Forward Gate Current
60 mA
10 mA
Igr
Reverse Gate Current
-1.8 mA
-0.6 mA
Pin
Input Power
29 dBm
@ 3dB Compression
Tch
Channel Temperature
175
oC
175
oC
Tstg
Storage Temperature
-65/175
oC
-65/175
oC
Pt
Total Power Dissipation
9.1 W
7.6 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
G
D


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