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EFA040A-100P Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc.

Part No. EFA040A-100P
Description  Low Distortion GaAs Power FET
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Maker  EXCELICS [Excelics Semiconductor, Inc.]
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EFA040A-100P Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc.

   
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EFA040A-100P
UPDATED 11/17/2006
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2006
NON-HERMETIC 100MIL METAL FLANGE PACKAGE
+23.0dBm TYPICAL OUTPUT POWER
9.0dB TYPICAL POWER GAIN AT 12GHz
0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES HIGH POWER
EFFICIENCY, LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (Ta = 25
OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
21.0
23.0
P1dB
Output Power at 1dB Compression
f= 12GHz
VDS = 8V, IDS ≈ 50% IDSS
f= 18GHz
23.0
dBm
7.5
9.0
G1dB
Gain at 1dB Compression
f= 12GHz
VDS = 8V, IDS ≈ 50% IDSS
f= 18GHz
6.5
dB
PAE
Power Added Efficiency at 1dB Compression
VDS = 8V, IDS ≈ 50% IDSS
f=12GHz
35
%
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
60
105
160
mA
GM
Transconductance
VDS = 3 V, VGS = 0 V
45
60
mS
VP
Pinch-off Voltage
VDS = 3 V, IDS = 1.0 mA
-2.0
-3.5
V
BVGD
Drain Breakdown Voltage
IGD = 1.0mA
-13
-15
V
BVGS
Source Breakdown Voltage
IGS = 1.0mA
-7
-14
V
RTH
Thermal Resistance (Au-Sn Eutectic Attach)
115*
ºC/W
Note: * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
OC
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
VDS
Drain-Source Voltage
12V
8V
VGS
Gate-Source Voltage
-5V
-4V
Igf
Forward Gate Current
1.8 mA
0.6 mA
Igr
Reverse Gate Current
0.3 mA
0.1 mA
Pin
Input Power
20 dBm
@ 3dB Compression
Tch
Channel Temperature
175
oC
175
oC
Tstg
Storage Temperature
-65/175
oC
-65/175
oC
Pt
Total Power Dissipation
1.2 W
1.2 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
G
D


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