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Dated : 04/12/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
SB706D-40
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
For low current rectification
Features
• High reliability
• Low reverse current
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRM
45
V
Reverse Voltage
VR
40
V
Average Rectified Forward Current
IO
30
mA
Peak Forward Surge Current ( t = 8.3 ms)
IFSM
200
mA
Junction Temperature
Tj
125
O
C
Storage Temperature Range
Tstg
- 55 to + 125
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at IF = 1 mA
VF
-
-
0.37
V
Reverse Current
at VR = 10 V
IR
-
-
1
µA
Reverse Breakdown Voltage
at IR = 10 µA
V(BR)R
45
-
-
V
Capacitance between Terminals
at VR = 1 V, f = 1 MHz
CT
-
2
-
pF
Marking Code: "ZE"
SOT-23 Plastic Package
3
1
2
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