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L9015QLT3G Datasheet(PDF) 1 Page - Leshan Radio Company |
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L9015QLT3G Datasheet(HTML) 1 Page - Leshan Radio Company |
1 / 4 page LESHAN RADIO COMPANY, LTD. MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5V Collector current-continuoun IC 100 mA THERMAL CHARATEERISTICS Symbol Max Unit Total Device Dissipation FR-5 Board. PD 225 mW 1.8 mW/ oC Thermal Resistance, Junction to Ambient RJA 556 oC/W PD 300 mW 2.4 mW/ oC Thermal Resistance, Junction to Ambient RJA 417 oC/W Junction and Storage Temperature TJ ,Tstg -55 to +150 oC Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25 oC Rating Characteristic TA=25 oC Derate above 25 oC General Purpose Transistors PNP Silicon FEATURE Complementary to L9014. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L9015QLT1G 15Q 3000/Tape&Reel L9015QLT3G 15Q 10000/Tape&Reel L9015RLT1G 15R 3000/Tape&Reel L9015RLT3G 15R 10000/Tape&Reel L9015SLT1G 15S 3000/Tape&Reel L9015SLT3G 15S 10000/Tape&Reel L9015XLT1G 1 3 2 SOT– 23 1 BASE COLLECTOR 3 2 EMITTER 1/4 We declare that the material of product compliance with RoHS requirements. |
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