L2SA1576AXT1G datasheet(1/4 Pages) LRC

Part #	L2SA1576AXT1G

Description	General Purpose Transistors

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Manufacturer	LRC [Leshan Radio Company]

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LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

–50

V

Collector–Base Voltage

V CBO

–60

V

Emitter–Base Voltage

V EBO

–6.0

V

Collector Current — Continuous

I C

–150

mAdc

Collector power dissipation

P C

0.2

W

Junction temperature

T j

150

°C

Storage temperature

T stg

-55 ~+150

°C

DEVICE MARKING

L2SA1576AQT1G =FQ L2SA1576ART1G=FR L2SA1576AST1G =FS

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

V (BR)CEO

– 50

—

V

(IC = –1 mA)

Emitter–Base Breakdown Voltage

V (BR)EBO

– 6

—

V

(IE = – 50

µA)

Collector–Base Breakdown Voltage

V (BR)CBO

– 60

—

V

(IC = – 50

µA)

Collector Cutoff Current

I CBO

—

– 0.1

µA

(VCB = – 60 V)

Emitter cutoff current

I EBO

—

– 0.1

µA

(VEB = – 6 V)

Collector-emitter saturation voltage

V CE(sat)

—

-0.5

V

(IC/IB = – 50 mA / – 5m A)

DC current transfer ratio

h FE

120

––

560

––

(V CE = – 6 V, I C= –1mA)

Transition frequency

f T

—

140

––

MHz

(V CE = – 12 V, I E= 2mA, f=30MHz )

Output capacitance

C ob

—

4.0

5.0

pF

(V CB = – 12 V, I E= 0A, f =1MHz )

h FE values are classified as follows:

QR

S

hFE

120~270

180~390

270~560

1

3

2

SC-70/SOT– 323

2

EMITTER

3

COLLECTOR

1

BASE

*

L2SA1576AXT1G

ORDERING INFORMATION

Device

Package

Shipping

L2SA1576AXLT1G

3000/Tape & Reel

SC-70

10000/Tape & Reel

L2SA1576AXLT3G

SC-70

We declare that the material of product compliance with RoHS requirements.

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