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Dated : 22/01/2008
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
BAV70
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Maximum Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
75
V
Average Forward Current
IO
200
mA
Maximum Peak Forward Current
IFM
300
mA
Non-Repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 µs
IFSM
1
2
A
Power Dissipation
Pd
350
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Ts
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
VF
VF
VF
VF
-
-
-
-
715
855
1
1.25
mV
mV
V
V
Reverse Current
at VR = 20 V
at VR = 75 V
at VR = 25 V, TJ = 150 OC
at VR = 75 V, TJ = 150 OC
IR
IR
IR
IR
-
-
-
25
2.5
30
50
nA
µA
µA
µA
Reverse Breakdown Voltage
at IR = 100 µA
V(BR)R
75
-
V
Total Capacitance
at f = 1 MHz
CT
-
2
pF
Reverse Recovery Time
at IF = IR = 10 mA to Irr = 1 mA, RL = 50 Ω
trr
-
4
ns
1
3
2
Marking Code: A4
SOT-23 Plastic Package
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