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Dated : 01/09/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
SD784WS
SILICON SCHOTTKY BARRIER DIODE
Applications
• Low voltage high speed switching
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
30
V
Reverse Voltage
VR
30
V
Average Forward Current
IO
100
mA
Peak Forward Current
IFM
300
mA
Peak Forward Surge Current
IFSM
1
A
Power Dissipation
PD
200
1)
mW
Junction Temperature Range
Tj
125
O
C
Storage Temperature Range
Ts
- 55 to + 125
O
C
1) Mounted on a glass epoxy circuit of board of 20 X 20 mm, pad dimension of 4 X 4 mm.
Characteristics at Ta = 25 OC
Parameter
Symbol
Typ.
Max.
Unit
Forward Voltage
at IF = 1 mA
at IF = 5 mA
at IF = 100 mA
VF
-
-
-
0.35
0.4
0.55
V
Reverse Current
at VR = 30 V
IR
-
15
µA
Total Capacitance
at VR = 1 V, f = 1 MHz
CT
40
-
pF
Anode
2
Top View
Marking Code: "MD"
Simplified outline SOD-323 and symbol
1
MD
2
PINNING
1
PIN
Cathode
DESCRIPTION
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