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STT6601 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT6601
Description  N & P-Channel Enhancement Mode Mos.FET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT6601 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
STT6601
(N-Ch) 2.8 A, 30 V, RDS(ON) 68 m
Ω
(P-Ch) -2.8 A, -30 V, RDS(ON) 120 m
Ω
N & P-Channel Enhancement Mode Mos.FET
01-June-2007 Rev. C
Page 1 of 6
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench
technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as notebook computer power management
and other battery-powered circuits where high-side switching, low in-line power loss and resistance to transients are needed.
FEATURES
N-Channel
30V/2.8A, RDS(ON) = 68mΩ@VGS = 10 V
30V/2.3A, RDS(ON) = 78mΩ@VGS = 4.5 V
30V/1.5A, RDS(ON) = 108mΩ@VGS = 2.5 V
P-Channel
-30V/-2.8A, RDS(ON) = 105mΩ@VGS = 10 V
-30V/-2.5A, RDS(ON) = 120mΩ@VGS = 4.5 V
-30V/-1.5A, RDS(ON) = 150mΩ@VGS = 2.5 V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
TSOP-6P package design
APPLICATIONS
Battery powered systems
Portable devices
Power management in NB
DC to DC converter, load switch, DSC,
LCD display inverter
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS
Ratings
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±12
±12
V
Continuous Drain Current (TJ=150℃)
ID @TA=25℃
ID @TA=70℃
2.8
2.3
-2.8
-2.1
A
Pulsed Drain Current
IDM
10
-8
A
PD @TA=25℃
1.15
Power Dissipation
PD @TA=70℃
0.75
W
Continuous Source Current (Diode Conduction)
IS
1.25
-1.4
A
50
52
Thermal Resistance- Junction to Ambient
T ≦ 10 sec
Steady State
R
θJA
90
90
/W
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.10 Max
L
0.45 Ref
A1
0
0.10
L1
0.60 Ref
A2
0.70
1.00
10°
c
0.12 Ref
b
0.30
0.50
D
2.70
3.10
e
0.95 Ref
E
2.60
3.00
e1
1.90 Ref
E1
1.40
1.80
Week code: A~Z (1~26); a ~ z (27 ~ 52)


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