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STT3981 Datasheet(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH |
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STT3981 Datasheet(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH |
4 / 5 page Elektronische Bauelemente STT3981 -1.6 A, -20 V, RDS(ON) 180 m Ω P-Channel Enhancement Mode Mos.FET 01-June-2005 Rev. B Page 4 of 5 - - 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25 C TJ = 150 C Source-Drain Diode Forward Voltage VSD Source-to-Drain Voltage (V) 0.0 0.1 0.2 0.3 0.4 0.5 0123456 VGS Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage ID = 1.9 A 0.2 0.1 0.0 0.1 0.2 0.3 50 25 0 25 50 75 100 125 150 Threshold Voltage T- - - -- J Temperature ( C) ID = 250 A 0.001 0 1 20 25 5 15 10 0.01 Single Pulse Power, Junction-to-Ambient Time (sec) 0.1 10 - Safe Operating Area, Junction-to-Case VDS Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 1 ms 0.1 TC = 25 C Single Pulse 10 ms 100 ms dc IDM Limited ID(on) Limited rDS(on) Limited BVDSS Limited 10 s, 1 s |
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