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STT3585 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT3585
Description  N And P-Channel Enhancement Mode Power Mos.FET
Download  7 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT3585 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
STT3585
3.5A, 20V,RDS(ON)75m
N And P-Channel Enhancement Mode Power Mos.FET
-2.5 A, -20V,RDS(ON)160mΩ
Description
The STT3585 provide the designer with best combination of fast
switching,low on-resistance and cost effectiveness.
* Low On-resistance
Features
* RoHS Compliant
* Low Gate Charge
The SOT-26 package is universally used for all commercial-industrial
surface mount applications.
01-Jun-2002 Rev. A
Page 1 of 7
T
otal Power Dissipation
Li
near Derating Factor
O
perating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Parameter
Symbol
Ratings
Unit
Thermal Data
Parameter
Symbo
Ratings
Unit
Thermal Resistance Junction-ambient
A
V
V
A
A
ID@TA=70
/W
C
W/ C
C
W
VDS
VGS
ID@TA=25
IDM
PD@TA=25
Tj, Tstg
Rthj-a
20
±12
10
3.5
2.8
1.14
0.01
-55~+150
110
-20
±12
-10
-2.5
-1.97
3
3
1
o
o
o
C
o
C
o
3
Max.
Ω
Absolute Maximum Ratings
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
G1
S2
G2
D1
S1
D2
3585
Date Code
1
5
2
3
4
6
D1
G1
G2
S1
D2
S2
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.10 MAX.
L
0.45 REF.
A1
0
0.10
L1
0.60 REF.
A2
0.70
1.00
10°
c
0.12 REF.
b
0.30
0.50
D
2.70
3.10
e
0.95 REF.
E
2.60
3.00
e1
1.90 REF.
E1
1.40
1.80


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