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STT3455 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT3455 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente STT3455 -4.0A, -30V,RDS(ON) 100m P-Channel Enhancement Mode Power Mos.FET IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf -30 -0.02 -1.0 - 3.0 100 -1 -25 100 170 5.5 1 2.6 7 6 18 4 640 90 30 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=-25V f=1.0MHz VDD=-15V ID=-1A VGS=-10V RG=3.3 RD=15 Ω Ω ID=-4.0A VDS=-24V VGS=-4.5V VGS=-10V, ID=-3.5A VGS=-4.5V, ID=-2.7A VGS=0V, ID=-250uA VGS= 20V ± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VDS=VGS, ID=-250uA Reference to 25 ,ID=-1mA _ _ _ _ _ _ _ _ _ _ Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VDS _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ IS=-1.6A, VGS=0V. V -1.2 Notes: 1.Pulse width limited by safe operating area. Forward Transconductance Gfs S 6 VDS=-5V, ID=-4.0A _ _ _ 400 8.8 Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=55 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS 2 Reverse Recovery Time Reverse Recovery Charge Is=-4.0A, VGS=0V _ _ _ _ Trr Qrr nC nS 21 14 _ dl/dt=100A/us o C o C o C o C o 2 2 2 2 Source-Drain Diode 2.P ulse width 300us, dutycycle 2%. ≦ ≦ Ω 01-Jun-2002 Rev. A Page 2 of 4 3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad. |
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