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STT3434 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT3434 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente STT3434 6.1 A, 30 V, RDS(ON) 34 m Ω N-Channel Enhancement Mode Power Mos.FET 01-June-2005 Rev. A Page 2 of 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0, ID = 250uA Gate Threshold Voltage VGS(th) 0.6 - - V VDS = VGS, ID = 1mA Forward Transconductance gfs - 20 - S VDS = 10V, ID = 6.1A Gate Leakage Current IGSS - - ±100 nA VGS = ±12 V Zero Gate Voltage Drain Current (Tj=25 ) ℃ - - 1 VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current (Tj=75 ) ℃ IDSS - - 5 uA VDS = 24 V, VGS = 0 V - - 34 VGS = 4.5 V, ID = 6.1 A Drain-Source On-Resistance 2 RDS(ON) - - 50 mΩ VGS = 2.5 V, ID = 2.0 A Total Gate Charge 2 Qg - 8 12 Gate-Source Charge Qgs - 1.9 - Gate-Drain Charge Qgd - 2.6 - nC ID = 6.1 A VDS = 15 V VGS = 4.5 V Td(on) - 21 - Turn-on Delay Time 2 Rise Time Tr - 45 - Td(off) - 40 - Turn-off Delay Time Fall Time Tf - 30 - ns VDS = 15 V ID = 1 A VGS = 4.5 V RG = 6 Ω RL = 15 Ω ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage 2 VSD - - 1.2 V IS = 1.7 A, VGS = 0 V Reverse Recovery Time 2 Trr - 40 - ns IS = 1.7 A, dl/dt = 100A/us Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width300us, duty cycle ≦ 2%. 3. Surface mounted on 1 in 2 copper pad of FR4 board, t ≦ 5 sec; 180°C/W when mounted on Min. copper pad. |
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