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STT2622 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT2622
Description  N-Channel Enhancement Mode Power Mos.FET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT2622 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
STT2622
520mA, 50V,RDS(ON) 1.8
N-Channel Enhancement Mode Power Mos.FET
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current
Ω
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient (Max)
m
A
V
V
A
m
A
ID@TA=70
/W
C
W/ C
C
W
VDS
VGS
ID@TA=25
IDM
PD@TA=25
Tj, Tstg
Rthj-a
50
±20
1.5
520
410
0.8
0.006
150
-55~+150
3
3
3
1
o
o
o
C
o
C
o
C
o
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Parameter
Symbol
Ratings
Unit
01-Jun-2002 Rev. A
Page 1 of
4
G1
S2
G2
D1
S1
D2
262 2
Date Code
1
5
2
3
4
6
Description
The STT2622 utiltzed advance processing techniques to achieve the lowest
* Low Gate Charge
The SOT-26 is universally used for all commercial-industrial applications.
possible on-resistance, extermely efficient and cost-effectiveness device.
Features
* RoHS Compliant
D1
G1
S1
G2
D2
S2
* Surface Mount Package
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.10 MAX.
L
0.45 REF.
A1
0
0.10
L1
0.60 REF.
A2
0.70
1.00
10°
c
0.12 REF.
b
0.30
0.50
D
2.70
3.10
e
0.95 REF.
E
2.60
3.00
e1
1.90 REF.
E1
1.40
1.80


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