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STT2604 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT2604 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 4 page  http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Notes: 1.Pulse width limited by safe operating area. 2.Pulse width 300us, dutycycle 2%. ≦ ≦ 01-Jun-2002 Rev. A Page 2 of 4 3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad. Elektronische Bauelemente STT2604 5.5A, 30V,RDS(ON) 45m N-Channel Enhancement Mode Power Mos.FET Ω Electrical Characteristics( Tj=25 C Unless otherwise specified) o Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage Reverse Recovery Time Trr _ Reverse Recovery Change _ Qrr nC nS 15 7 =4.8 =4.8A, VGS=0V. VSD _ _ IS A, VGS=0V. V 1.2 2 _ _ IS dl/dt=100A/us 6 2 3 6 8 15 4 105 35 nC nS pF VGS=0V VDS=25V f=1.0MHz VDD=15V ID=1A VGS=10V RG=3.3 RD=15 Ω Ω ID=4.8A VDS=24V VGS= 4.5V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 30 0.02 1.0 100 1 25 45 65 ± V V/ Reference to 25C, ID=1m o oC V nA uA uA m 7 Ω VGS=10V, ID=4.8A VGS=4.5V, ID=2.4A VGS=0V, ID=250uA VGS= 20V ± VDS=30V,VGS=0 VDS=24V,VGS=0 VDS=VGS, ID=250uA _ _ _ _ _ _ _ _ _ _ _ _ _ S VDS=10V, ID=4.8A _ _ _ _ 440 10 705 A Total Gate Charge Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj IDSS Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current(Tj=55 ) VGS(th) IGSS Forward Transconductance Gfs oC oC 2 2 RDS(ON) 2 3.0 Source-Drain Diode 2 |
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