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SSD20N03 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSD20N03 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 5 page  Elektronische Bauelemente SSD20N03 N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 m Ω 01-June-2005 Rev. A Page 2 of 5 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID= 250uA Breakdown Voltage Temperature ΔBVDSS /ΔTj - 0.037 - V /°C Reference to 25°C, ID= 1mA Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID= 250uA Forward Transconductance gfs - 3 - S VDS= 10V, ID= 10A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current(Tj=25℃) - - 1 uA VDS= 30V, VGS=0 Drain-Source Leakage Current(Tj=150 ) ℃ IDSS - - 100 uA VDS= 24V, VGS= 0 - - 52 VGS= 10V, ID= 10A Static Drain-Source On-Resistance RDS(ON) - - 85 mΩ VGS= 4.5V, ID= 8A Total Gate Charge 2 Qg - 6.1 - Gate-Source Charge Qgs - 1.4 - Gate-Drain (“Miller”) Change Qgd - 4 - nC ID= 10 A VDS= 24 V VGS= 5 V Turn-on Delay Time 2 Td(on) - 4.9 - Rise Time Tr - 29 - Turn-off Delay Time Td(off) - 14.3 - Fall Time Tf - 3.6 - ns VDS=15 V ID= 20 A VGS= 10 V RG= 3.3 Ω RD= 0.75 Ω Input Capacitance Ciss - 290 - Output Capacitance Coss - 160 - Reverse Transfer Capacitance Crss - 45 - pF VGS=0 V VDS=25 V f=1.0 MHz SOURCE-DRAIN DIODE Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage 2 VSD - - 1.3 V IS=20 A, VGS=0 V, TJ = 25°C Continuous Source Current (Body Diode) IS - - 20 A VD = VG = 0V, VS = 1.3 V Pulsed Source Current (Body Diode) 1 ISM - - 53 A Notes: 1. Pulse width limited by safe operating area. 2. Pulse width≦300us, duty cycle≦2%. |
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