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SID6679 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SID6679 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 4 page  Electrical Characteristics( Tj=25 C Unless otherwise specified) o Notes: Pulse width limited by Max. junction temperature. 1. Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage Reverse Recovery Time Trr _ Reverse Recovery Change _ Qrr nC nS 47 43 - 24A, VGS=0V. S =-16A, VGS=0V. VSD _ _ IS= V -1.2 2 _ _ I dl/dt=100A/us 42 67 6 25 11 35 58 78 2870 960 740 nC nS pF VGS=0V VDS=25V f=1.0MHz VDD=-15V ID=-16A VGS=-10V RG=3.3 RD=0.94 Ω Ω ID=-16A VDS=-24V VGS=-4.5V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 30 0.03 1.0 -3.0 100 -1 -25 9 15 ± V V/ Reference to 25C, ID=-1mA o oC V nA uA uA m 34 Ω VGS=-10V, ID=- 30A VGS=-4.5V, ID=-24A VGS=0V, ID=-250uA VGS= 25V ± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VDS=VGS, ID=-250uA _ _ _ _ _ _ _ _ _ _ _ _ _ S VDS=-10V, ID=-24A _ _ _ _ Total Gate Charge Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj IDSS Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current(Tj=150 ) VGS(th) IGSS Forward Transconductance Gfs oC oC 2 2 RDS(ON) 2 - - - 4590 Source-Drain Diode 2.Pulse width 300us, dutycycle 2%. ≦ ≦ ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente SID6679 -75A, -30V,RDS(ON)9m P-Channel Enhancement Mode Power Mos.FET Ω 2 |
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