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SIE830DF Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIE830DF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model SiE830DF SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 1375 A VGS = 10 V, ID = 16 A 0.0034 0.0035 Drain-Source On-State Resistance a rDS(on) VGS = 4.5 V, ID = 15 A 0.0039 0.0039 Ω Forward Transconductance a gfs VDS = 15 V, ID = 16 A 93 95 S Diode Forward Voltage a VSD IS = 10 A 0.87 0.80 V Dynamic b Input Capacitance Ciss 5079 5500 Output Capacitance Coss 697 650 Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 199 220 pF VDS = 15 V, VGS = 10 V, ID = 20 A 75 75 Total Gate Charge Qg 37 33 Gate-Source Charge Qgs 11 11 Gate-Drain Charge Qgd VDS = 15 V, VGS = 4.5 V, ID = 20 A 5.1 5.1 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 74386 S-70504 Rev. A, 26-Mar-07 |
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