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2N3904 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # 2N3904
Description  NPN Silicon General Purpose Transistor
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2N3904 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
2N3904
NPN Silicon
General Purpose Transistor
TO-92
FEATURES
. Power Dissipation
PCM: 625 mW (Ta=25
)
. Collector Current
ICM: 200 mA
. Collector - Base Voltage
V(BR)CBO: 60 V
ELECTRICAL CHARACTERISTICS (TA = 25
unless otherwise specified)
Parameter
SYMBOL
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
Collector - Emitter Breakdown Voltage
V(BR)CEO
IC = 1 mA, IB = 0 A
40
-
-
V
Collector - Base Breakdown Voltage
V(BR)CBO
IC = 100 µA, IE = 0 A
60
-
-
V
Emitter - Base Breakdown Voltage
V(BR)EBO
IE = 100 µA, IC = 0 A
6
-
-
V
Collector Cut-Off Current
ICBO
VCB = 60 V, IE = 0 A
-
-
0.1
Collector Cut-Off Current
ICEO
VCE = 40 V, IB = 0 A
-
-
0.1
Emitter Cut-Off Current
IEBO
VEB = 5 V, IC = 0 A
-
-
0.1
µA
hFE(1)
VCE = 1 V, IC = 10 mA
100
-
400
DC Current Gain
hFE(2)
VCE = 1 V, IC = 50 mA
60
-
-
-
Collector - Emitter Saturation Voltage
VCE(sat)
IC = 50 mA, IB = 5 mA
-
-
0.3
V
Base - Emitter Saturation Voltage
VBE(sat)
IC = 50 mA, IB = 5 mA
-
-
0.95
V
VCE = 20 V, IC = 10 mA
Transition Frequency
fT
f = 100 MHz
300
-
-
MHz
Operating and Storage Junction Temperature Range
TJ, TSTG
-
-55 ~ +150
CLASSIFICATION OF hFE(1)
Rank
O
Y
G
Rang
100 ~ 200
200 ~ 300
300 ~ 400
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
COLLECTOR
BASE
EMITTER
1
2
3
3
2
1
01-Jun-2002 Rev. A
Page 1 of 3
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free


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