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SIR464DP Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIR464DP Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 68871 S-82017-Rev. A, 01-Sep-08 www.vishay.com 3 Vishay Siliconix SiR464DP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 14 28 42 56 70 0.0 0.5 1.0 1.5 2.0 2.5 VGS =10thru 4 V VGS =3 V VDS - Drain-to-Source Voltage (V) 0.0020 0.0025 0.0030 0.0035 0.0040 0.0045 014 28 42 56 70 VGS =4.5 V VGS =10 V ID - Drain Current (A) 0 2 4 6 8 10 0 13263952 65 VDS =20 V ID =10A VDS =15 V VDS =10 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0 1 234 5 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 900 1800 2700 3600 4500 0 6 12 18 24 30 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS =4.5 V VGS =10 V ID =15A TJ -Junction Temperature (°C) |
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