SI7998DP datasheet(9/12 Pages) VISHAY

Part #	SI7998DP

Description	Dual N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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9 / 12 page

Document Number: 68970

S09-0269-Rev. B, 16-Feb-09

www.vishay.com

9

Vishay Siliconix

Si7998DP

New Product

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Reverse Current vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

10

1

100

TJ =25 °C

TJ =150 °C

VSD -Source-to-Drain Voltage (V)

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.000

0.005

0.010

0.015

0.020

02

4

6

8

10

TJ = 25 °C

TJ = 125 °C

ID =20A

VGS - Gate-to-Source Voltage (V)

0

10

20

30

40

50

Time (s)

10

1000

0.1

0.01

0.001

100

1

Safe Operating Area, Junction-to-Ambient

0.01

100

1

100

0.01

0.1

1ms

10 ms

100 ms

0.1

1

10

TA = 25 °C

Single Pulse

Limited byRDS(on)*

100 µs

1s

10 s

DC

BVDSS Limited

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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