SI4136DY datasheet(3/7 Pages) VISHAY

Part #	SI4136DY

Description	N-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 64718

S09-0139-Rev. A, 02-Feb-09

www.vishay.com

3

Vishay Siliconix

Si4136DY

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

14

28

42

56

70

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10thru 3 V

VDS - Drain-to-Source Voltage (V)

0.0010

0.0014

0.0018

0.0022

0.0026

0.0030

014

28

42

56

70

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

0

2

4

6

8

10

0

15304560

75

ID =20A

VDS =15 V

VDS =10 V

VDS =5 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0

1

234

5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

0

1200

2400

3600

4800

6000

0.0

2.4

4.8

7.2

9.6

12.0

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

ID =15A

VGS =4.5 V

VGS =10 V

TJ -Junction Temperature (°C)

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