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IRF840 Datasheet(PDF) 2 Page - Dc Components |
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IRF840 Datasheet(HTML) 2 Page - Dc Components |
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2 / 2 page  Characteristic Symbol Min Typ Max Unit Test Conditions Drain-Source Breakdown Voltage V(BR)DSS 500 - - V VGS=0V, ID=250 µA Drain-Source Leakage Current IDSS - - 0.25 mA VDS=500V, VGS=0V - - 1.0 VDS=400V, VGS=0V, TJ=125oC Gate-Source Forward Leakage Current IGSSF - - 100 nA VGSF=20V, VDS=0V Gate-Source Reverse Leakage Current IGSSR - - -100 VGSR=-20V, VDS=0V Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250 µA Static Drain-Source On-Resistance RDS(on) - 0.6 0.8 Ω VGS=10V, ID=4.0A(Note) Forward Transconductance gFS 4.0 - - S VDS= 15V, ID=4.0A(Note) Input Capacitance Ciss - 1450 1680 Output Capacitance Coss - 190 246 pF VDS=25V, VGS=0V, f=1.0MHz Reverse Transfer Capacitance Crss - 45.4 144 Turn-On Delay Time td(on) - 15 50 Rise Time tr - 33 72 ns VDD=250V, ID=8.0A, Turn-Off Delay Time td(off) - 40 150 VGS=10V, RG=9.1 Ω(Note) Fall Time tf - 32 60 Total Gate Charge Qg - 40 64 Gate-Source Charge Qgs - 8.0 - nC VDS=400V, ID=8.0A, VGS=10V(Note) Gate-Drain Charge Qgd - 17 - Internal Drain Inductance LD - 4.5 - nH Measured from the drain lead 0.25" from package to center of die Internal Source Inductance LS - 7.5 - nH Measured from the source lead 0.25" from package to source bond pad Diode Forward Voltage VSD - 1.2 2.0 V IS=8.0A, VGS=0V(Note) Reverse Recovery Time trr - 320 - ns IF=8.0A, di/dt=100A/ µs(Note) Forward Turn-On Time ton Intrinsic turn-on time is neglegible and dominated by inductance LS+LD Thermal Resistance Junction to Case R θJC - - 1.0 o C/W - Junction to Ambient R θJA - - 62.5 Electrical Characteristics (TJ = 25oC unless otherwise specified) Note: Pulse Test: Pulse Width 300 µs, Duty Cycle 2% R DC COMPONENTS CO., LTD. IRF840 N-Channel Power MOSFET |
Similar Part No. - IRF840 |
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Similar Description - IRF840 |
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