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BC846 Datasheet(PDF) 1 Page - Dc Components |
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1 / 1 page BC846 DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Pinning 1 = Base 2 = Emitter 3 = Collector Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 65 V Emitter-Base Voltage VEBO 6 V Collector Current IC 100 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) Rank(Marking) A B C Range 110~220 200~450 420~800 Classification of hFE .091(2.30) .067(1.70) SOT-23 Dimensions in inches and (millimeters) .063(1.60) .055(1.40) .108(0.65) .089(0.25) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .020(0.50) .012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30) .035(0.90) .026(0.65) .010(0.25) Max .027(0.67) .013(0.32) 2 1 3 Characteristic Symbol Min Typ Max Unit Test Conditi ons Collector-Base Breakdown Volatge BVCBO 80 - - V IC=10 µA Collector-Emitter Breakdown Voltage BVCEO 65 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=1 µA Collector Cutoff Current ICBO - - 15 nA VCB=30V Collector-Emitter Saturation Voltage(1) VCE(sat)1 - 90 250 mV IC=10mA, IB=0.5mA VCE(sat)2 - 200 600 mV IC=100mA, IB=5mA Base-Emitter Saturation Voltage(1) VBE(sat)1 - 700 - mV IC=10mA, IB=0.5mA VBE(sat)2 - 900 - mV IC=100mA, IB=5mA Base-Emitter On Voltage VBE(on)1 580 - 700 mV IC=2mA, VCE=5V VBE(on)2 - - 770 mV IC=10mA, VCE=5V DC Current Gain(1) hFE 110 - 800 - IC=2mA, VCE=5V Transition Frequency fT - 300 - MHz IC=10mA, VCE=5V Output Capacitance Cob - 3.5 6 pF VCB=10V, f=1MHz, IE=0 Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% |
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