BC846

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for switching and AF amplifier amplification

suitable for automatic insertion in thick and thin-film

circuits.

Pinning

1 = Base

2 = Emitter

3 = Collector

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

80

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

6

V

Collector Current

100

mA

Total Power Dissipation

225

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Rank(Marking)

A

B

C

Range

110~220

200~450

420~800

.091(2.30)

.067(1.70)

SOT-23

Dimensions in inches and (millimeters)

.063(1.60)

.055(1.40)

.108(0.65)

.089(0.25)

.045(1.15)

.034(0.85)

.118(3.00)

.110(2.80)

.020(0.50)

.012(0.30)

.0043(0.11)

.0035(0.09)

.004

(0.10)

.051(1.30)

.035(0.90)

.026(0.65)

.010(0.25)

Max

.027(0.67)

.013(0.32)

2

1

3

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditi

ons

Collector-Base Breakdown Volatge

80

-

-

V

µA

Collector-Emitter Breakdown Voltage

65

-

-

V

Emitter-Base Breakdown Volatge

6

-

-

V

µA

Collector Cutoff Current

-

-

15

nA

-

90

250

mV

-

200

600

mV

-

700

-

mV

-

900

-

mV

Base-Emitter On Voltage

580

-

700

mV

-

-

770

mV

110

-

800

-

Transition Frequency

-

300

-

MHz

Output Capacitance

-

3.5

6

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%