2SD880

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Pinning

1 = Base

2 = Collector

3 = Emitter

Description

Designed for low frequency power amplifier applications.

TO-220AB

Dimensions in inches and (millimeters)

.625(15.87)

.570(14.48)

.562(14.27)

.500(12.70)

.055(1.39)

.045(1.15)

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

.295(7.49)

.220(5.58)

.350(8.90)

.330(8.38)

.640

(16.25)

Typ

.055(1.40)

.045(1.14)

.037(0.95)

.030(0.75)

.100

(2.54)

Typ

.024(0.60)

.014(0.35)

Φ.151

Φ(3.83)

Typ

1 2 3

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

60

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

7

V

Collector Current

3

A

Base Current

0.5

A

Total Power Dissipation

1.5

W

30

W

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

60

-

-

V

Collector-Emitter Breakdown Voltage

60

-

-

V

Collector Cutoff Current

-

-

0.1

mA

Emitter Cutoff Current

-

-

0.1

mA

-

-

1

V

-

-

1

V

60

-

300

-

Transition Frequency

-

3

-

MHz

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Rank

O

Y

GR

Range

60~120

100~200

150~300