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2SB1345 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part No. 2SB1345
Description  Silicon PNP Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB1345 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB1345 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB1345 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SB1345 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1345
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50μA; IE=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50μA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
B
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
B
-2.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE
DC current gain
IC=-1A ; VCE=-5V
60
320
fT
Transition frequency
IC=-0.5A ; VCE=-10V
12
MHz
hFE Classifications
D
E
F
60-120
100-200
160-320
2


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