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2SC3505 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC3505 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3505 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 700 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V ICBO Collector cut-off current VCB=900V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 1.0 mA hFE DC current gain IC=2A ; VCE=5V 10 Switching times ton Turn-on time 1.0 µs tstg Storage time 5.0 µs tf Fall time IC=3A;IB1=0.6A;IB2=-1.2A RL=100D,PW=20µs DutyE2% 1.0 µs |
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