MJE171 datasheet(2/3 Pages) SAVANTIC

Part #	MJE171

Description	Silicon PNP Power Transistors

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Manufacturer	SAVANTIC [Savantic, Inc.]

Direct Link	http://www.svntc.com

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SavantIC Semiconductor

Product Specification

2

Silicon PNP Power Transistors

MJE170/171/172

CHARACTERISTICS

Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

MJE170

-40

MJE171

-60

V(BR)CEO

Collector-emitter

breakdown voltage

MJE172

IC=-10mA;IB=0

-80

V

VCE(sat)-1

Collector-emitter saturation voltage

IC=-500mA ;IB=-50mA

-0.3

V

VCE(sat)-2

Collector-emitter saturation voltage

IC=-1.5A ;IB=-150mA

-0.9

V

VCE(sat)-3

Collector-emitter saturation voltage

IC=-3A ;IB=-600mA

-1.7

V

VBE(sat)-1

Base-emitter saturation voltage

IC=-1.5A ;IB=-150mA

-1.5

V

VBE(sat)-2

Base-emitter saturation voltage

IC=-3A ;IB=-600mA

-2.0

V

VBE

Base-emitter on voltage

IC=-500mA ; VCE=-1V

-1.2

V

MJE170

VCB=-60V; IE=0

TC=150

-0.1

µA

mA

MJE171

VCB=-80V; IE=0

TC=150

-0.1

µA

mA

ICBO

Collector cut-off current

MJE172

VCB=-100V; IE=0

TC=150

-0.1

µA

mA

IEBO

Emitter cut-off current

VEB=-7V; IC=0

-0.1

µA

hFE-1

DC current gain

IC=-100mA ; VCE=-1V

50

250

hFE-2

DC current gain

IC=-500mA ; VCE=-1V

30

hFE-3

DC current gain

IC=-1.5A ; VCE=-1V

12

fT

Transition frequency

IC=-100mA ; VCE=-10V

50

MHz

COB

Output capacitance

IE=0 ; VCB=-10V,f=0.1MHz

50

pF

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