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MJE171 Datasheet(PDF) 2 Page - Savantic, Inc. |
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MJE171 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors MJE170/171/172 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT MJE170 -40 MJE171 -60 V(BR)CEO Collector-emitter breakdown voltage MJE172 IC=-10mA;IB=0 -80 V VCE(sat)-1 Collector-emitter saturation voltage IC=-500mA ;IB=-50mA -0.3 V VCE(sat)-2 Collector-emitter saturation voltage IC=-1.5A ;IB=-150mA -0.9 V VCE(sat)-3 Collector-emitter saturation voltage IC=-3A ;IB=-600mA -1.7 V VBE(sat)-1 Base-emitter saturation voltage IC=-1.5A ;IB=-150mA -1.5 V VBE(sat)-2 Base-emitter saturation voltage IC=-3A ;IB=-600mA -2.0 V VBE Base-emitter on voltage IC=-500mA ; VCE=-1V -1.2 V MJE170 VCB=-60V; IE=0 TC=150 -0.1 -0.1 µA mA MJE171 VCB=-80V; IE=0 TC=150 -0.1 -0.1 µA mA ICBO Collector cut-off current MJE172 VCB=-100V; IE=0 TC=150 -0.1 -0.1 µA mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 µA hFE-1 DC current gain IC=-100mA ; VCE=-1V 50 250 hFE-2 DC current gain IC=-500mA ; VCE=-1V 30 hFE-3 DC current gain IC=-1.5A ; VCE=-1V 12 fT Transition frequency IC=-100mA ; VCE=-10V 50 MHz COB Output capacitance IE=0 ; VCB=-10V,f=0.1MHz 50 pF |
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