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2N5672 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2N5672 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5671 2N5672 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5671 90 VCEO(SUS) Collector-emitter sustaining voltage 2N5672 IC=0.2A ;IB=0 120 V VCEsat Collector-emitter saturation voltage IC=15A; IB=1.2A 0.75 V VBEsat Base-emitter saturation voltage IC=15A ;IB=1.2A 1.5 V VBE Base-emitter on voltage IC=15A ; VCE=5V 1.6 V ICEO Collector cut-off current VCE=80V; IB=0 10 mA 2N5671 VCE=110V; VBE(off)=1.5V 12 2N5672 VCE=135V; VBE(off)=1.5V 10 2N5671 15 ICEV Collector cut-off current 2N5672 VCE=100V;VBE(off)=1.5V; TC=150 10 mA IEBO Emitter cut-off current VEB=7V; IC=0 10 mA hFE-1 DC current gain IC=15A ; VCE=2V 20 100 hFE-2 DC current gain IC=20A ; VCE=5V 20 fT Trainsistion frequency IC=2A ; VCE=10V;f=1MHz 40 MHz Switching times ton Turn-on time 0.5 µs ts Storage time 1.5 µs tf Fall time IC=15A ;IB1=- IB2=1.2A VCC=30V;tp=0.1ms 0.5 µs |
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