BD245B datasheet(2/3 Pages) ISC

Part #	BD245B

Description	isc Silicon NPN Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD245/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD245

45

BD245A

60

BD245B

80

V(BR)CEO

Collector-Emitter

Breakdown Voltage

BD245C

IC= 30mA ;IB=0

B

100

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 3A; IB= 0.3A

B

1.0

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A; IB= 2.5A

4.0

V

VBE(on)-1

Base-Emitter On Voltage

IC= 3A ; VCE= 4V

1.6

V

VBE(on)-2

Base-Emitter On Voltage

IC= 10A ; VCE= 4V

3.0

V

BD245

VCE= 55V; VBE= 0

BD245A

VCE= 70V; VBE= 0

BD245B

VCE= 90V; VBE= 0

ICES

Collector

Cutoff Current

BD245C

VCE= 115V; VBE= 0

0.4

mA

BD245/A

VCE= 30V;IB= 0

ICEO

Collector

Cutoff Current

BD245B/C

VCE= 60V;IB= 0

0.7

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

1.0

mA

hFE-1

DC Current Gain

IC= 1A ; VCE= 4V

40

hFE-2

DC Current Gain

IC= 3A ; VCE= 4V

20

hFE-3

DC Current Gain

IC= 10A ; VCE= 4V

4

fT

Current-Gain—Bandwidth Product

IC= 0.5A ;VCE= 10V,ftest= 1.0MHz

3.0

MHz

Switching times

ton

Turn-on Time

0.2

μs

toff

Turn-off Time

IC= 1A; IB1= -IB2= 0.1A;

RL=20Ω; VBE(OFF)= -3.7V

0.8

μs

isc Website：www.iscsemi.cn

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