16

Symbol

Parameter

Minimum

Typical

Maximum

Unit

Conditions

4.25V

300

-

-

µs

10

-

-

µs

100

-

-

µs

Interrupt delay from

6-

24

µs

Write-protect time for

external RAM

90

100

125

µs

and RST activated.

100

200

300

ms

Internal write-protection period af-

ms

Reset active time-out period

Chip enable recovery

time

ms

Time during which external SRAM

Chip enable propagation

delay to external SRAM

-

9

12

ns

Output load A

Caution:

Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode

may affect data integrity.

Aug. 1995

Power-Down/Power-Up Timing

Notes:

PWRIE set to “1” to enable power fail interrupt.

RST and INT are open drain and require an external pull-up resistor.

bq4845/bq4845Y