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BQ4016 Datasheet(PDF) 6 Page - Texas Instruments

Part # BQ4016
Description  1024Kx8 Nonvolatile SRAM
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ4016 Datasheet(HTML) 6 Page - Texas Instruments

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bq4016/bq4016Y
Write Cycle (TA = 0 to 70°C, VCCmin ≤ VCC ≤ VCCmax)
Symbol
Parameter
-70
Units
Conditions/Notes
Min.
Max.
tWC
Write cycle time
70
-
ns
tCW
Chip enable to end of write
65
-
ns
(1)
tAW
Address valid to end of write
65
-
ns
(1)
tAS
Address setup time
0
-
ns
Measured from address valid to
beginning of write. (2)
tWP
Write pulse width
55
-
ns
Measured from beginning of write to
end of write. (1)
tWR1
Write recovery time
(write cycle 1)
5
-
ns
Measured from WE going high to
end of write cycle. (3)
tWR2
Write recovery time
(write cycle 2)
15
-
ns
Measured from CE going high to end
of write cycle. (3)
tDW
Data valid to end of write
30
-
ns
Measured to first low-to-high
transition of either CE or WE.
tDH1
Data hold time
(write cycle 1)
0
-
ns
Measured from WE going high to
end of write cycle. (4)
tDH2
Data hold time
(write cycle 2)
10
-
ns
Measured from CE going high to end
of write cycle. (4)
tWZ
Write enabled to output in high Z
0
25
ns
I/O pins are in output state. (5)
tOW
Output active from end of write
5
-
ns
I/O pins are in output state. (5)
Notes:
1.
A write ends at the earlier transition of CE going high and WE going high.
2.
A write occurs during the overlap of a low CE and a low WE. A write begins at the later transition
of CE going low and WE going low.
3.
Either tWR1 or tWR2 must be met.
4.
Either tDH1 or tDH2 must be met.
5.
If CE goes low simultaneously with WE going low or after WE going low, the outputs remain in
high-impedance state.
Sept. 1996 B
6


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