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P6KE6.8A Datasheet(PDF) 2 Page - MDE Semiconductor, Inc. |
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P6KE6.8A Datasheet(HTML) 2 Page - MDE Semiconductor, Inc. |
2 / 3 page RATING AND CHARACTERISTIC CURVES P6KE SERIES MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com 10 100 1000 1 10 100 200 TJ = TJ max. 8.3ms Single Half Sine- Wave 5 50 Number of Cycles at 60 Fig.6 - Max.Non-Repetitive Forward Surge Uni-Directional Only 50 10 100 1000 10000 VWM - Reverse Stand-Off Voltage (V) 1.0 100 200 1 Measured at Stand-Off Voltage, VWM TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p Measured at Zero Bias Fig.4 - Typ.Junction Capacitance Uni- 6000 0.00 0.63 1.25 1.88 2.50 3.13 3.75 4.38 5.00 0 25 50 75 100 125 150 175 200 0 60 HZ Resistive or Inductive Load TL - Lead Temperature (°C L=0.375" (9.5mm) Lead Lengths 1.6x1.6x.040" (40x40x1mm) Copper Heat Sinks Fig.5 - steady State Power Derating Curve 3.0 4.0 150 0 1.0 2.0 tr = 10µsec. Peak Value IPPM Half Value- IPPM 2 TJ = 25°C Pulse Width(td)is defined as the point where the peak current decays to 50% of IPPM 10/1000µsec.Waveform as defined by R.E.A. td Fig.3 - Pulse Waveform 3 0 4.0 50 t - Time(ms) 100 0.001 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 Fig.7 - Typical Reverse Leakage Characteristics Measured at Devices Stand-off Voltage,VWM TA = 25°C V(BR) - Breakdown Voltage (V) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 Fig. 8 - Typ.Transient Thermal Impedance tp-Pulse Duration (sec) 0 12.5 25 37.5 50 62.5 75 87.5 100 0 0.2 0.4 0.6 0.8 1 1.2 Fig.2 - Pulse Derating Curve TA - Ambient Temperature 0.1 1 10 100 Non-repetitive Pulse Waveform shown in Fig. 3 0.1µs 1.0µs 10µs 100µs 1.0ms 10ms td - Pulse Width (sec.) Pig.1 - Peak Pulse Power Rating Curve |
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