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FKP250A Datasheet(PDF) 2 Page - Sanken electric

Part # FKP250A
Description  N-Channel MOS FET
Download  9 Pages
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Manufacturer  SANKEN [Sanken electric]
Direct Link  http://www.sanken-ele.co.jp/en
Logo SANKEN - Sanken electric

FKP250A Datasheet(HTML) 2 Page - Sanken electric

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N-Channel MOS FET
FKP250A
June, 2007
Sanken Electric Co., Ltd.
T02-008EA-070531
Electrical characteristics
(Ta=25°C）
Limits
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source breakdown Voltage
V(BR)DSS
ID=100μA,VGS=0V
250
V
Gate to Source Leakage Current
IGSS
VGS=±30V
±100
nA
Drain to Source Leakage Current
IDSS
VDS=250V, VGS=0V
100
μA
Gate Threshold Voltage
VTH
VDS=10V, ID=1mA
3.0
4.5
V
Forward Transconductance
Re(Yfs)
VDS=10V, ID=25A
30
42
S
Static Drain to Source On-Resistance
RDS(on)
ID=25A, VGS=10V
37
43
mΩ
Input Capacitance
Ciss
3800
Output Capacitance
Coss
630
Reverse Transfer Capacitance
Crss
VDS=25V
VGS=0V
f=1MHz
210
pF
Turn-On Delay Time
td(on)
40
Rise Time
tr
110
Turn-Off Delay Time
td(off)
160
Fall Time
tf
ID=25A, VDD≈125V
RL=5Ω, VGS=10V
RG=5Ω
See Fig.2
90
ns
Source-Drain Diode Forward Voltage
VSD
ISD=50A,VGS=0V
1.0
1.5
V
Gate Threshold Voltage Temp.
Coefficient
ΔVTH
/
ΔTch
VDS=10V, ID=1mA
-11
mV/°C
2/9


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