TSTS750 datasheet(2/5 Pages) VISHAY

Part #	TSTS750

Description	GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

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Manufacturer	VISHAY [Vishay Siliconix]

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2 / 5 page

TSTS750.

Vishay Telefunken

2 (5)

Rev. 2, 20-May-99

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 81049

Basic Characteristics

Tamb = 25_C

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Forward Voltage

IF = 100 mA, tp x 20 ms

VF

1.3

1.7

V

Breakdown Voltage

IR = 100 mA

V(BR)

5

V

Junction Capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

30

pF

Radiant Power

IF = 100 mA, tp x 20 ms

fe

7

mW

Temp. Coefficient of

fe

IF = 100 mA

TKfe

–0.8

%/K

Angle of Half Intensity

ϕ

±30

deg

Peak Wavelength

IF = 100 mA

lp

950

nm

Spectral Bandwidth

IF = 100 mA

Dl

50

nm

Rise Time

IF = 1.5 A, tp/T = 0.01,

tp x 10 ms

tr

400

ns

Fall Time

IF = 1.5 A, tp/T = 0.01,

tp x 10 ms

tf

400

ns

Type Dedicated Characteristics

Tamb = 25_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Radiant Intensity

IF=100mA, tp=20ms

TSTS7500

Ie

1.25

1.6

mW/sr

y

F

TSTS7501

Ie

1.6

2.5

3.2

mW/sr

TSTS7502

Ie

2.5

4

5

mW/sr

TSTS7503

Ie

4

6.3

8

mW/sr

Typical Characteristics (Tamb = 25_C unless otherwise specified)

0

25

50

75

100

0

200

400

600

Tamb – Ambient Temperature ( °C )

125

94 8017 e

RthJA

100

300

500

RthJC

Figure 1. Power Dissipation vs. Ambient Temperature

0

20

406080

0

50

100

150

200

300

Tamb – Ambient Temperature ( °C )

100

94 8018 e

RthJC

250

RthJA

Figure 2. Forward Current vs. Ambient Temperature

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