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TSMF3700 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. TSMF3700
Description  GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSMF3700 Datasheet(HTML) 1 Page - Vishay Siliconix

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TSMF3700
Document Number 81032
Rev. 1.4, 08-Mar-05
Vishay Semiconductors
www.vishay.com
1
94 8553
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
TSMF3700 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology in
a miniature PL-CC-2 SMD package.
It has been designed to meet the increasing demand
on optoelectronic devices for surface mounting.
The package consists of a lead frame which is sur-
rounded with a white thermoplast. The reflector inside
the package is filled up with clear epoxy.
Features
• SMT IRED with extra high radiant power
• Low forward voltage
• Compatible with automatic placement equipment
• EIA and ICE standard package
• Suitable for infrared, vapor phase and wavesolder
process
• Available in 8 mm tape
• Suitable for pulse current operation
• Extra wide angle of half intensity
ϕ = ± 60°
• Peak wavelength
λ
p = 870 nm
• High reliability
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared source in tactile keyboards
IR diode in low space applications
High performance PCB mounted infrared sensors
High power infrared emitter for miniature light barriers
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
VR
5V
Forward current
IF
100
mA
Peak Forward Current
tp/T = 0.5, tp = 100 µsIFM
200
mA
Surge Forward Current
tp = 100 µsIFSM
1A
Power Dissipation
PV
160
mW
Junction Temperature
Tj
100
°C
Operating Temperature Range
Tamb
- 55 to + 100
°C
Storage Temperature Range
Tstg
- 55 to + 100
°C
Soldering Temperature
t
≤ 10 sec
Tsd
260
°C
Thermal Resistance Junction/
Ambient
RthJA
450
K/W


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