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LTC5535 Datasheet(PDF) 9 Page - Linear Technology

Part # LTC5535
Description  Precision 600MHz to 7GHz, RF Detector with Adjustable Gain and 12MHz Baseband Bandwidth
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTC5535 Datasheet(HTML) 9 Page - Linear Technology

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LTC5535
9
5535f
APPLICATIO S I FOR ATIO
Operation
The LTC5535 RF detector integrates several functions to
provide RF power detection over frequencies ranging
from 600MHz to 7GHz. These functions include an internal
frequency compensated output amplifier, an RF Schottky
diode peak detector and a level shift amplifier to convert the
RF input signal to DC. The LTC5535 has both gain setting
and voltage offset adjustment capabilities.
Output Amplifier
The output amplifier is capable of supplying typically
20mA into a load. The negative terminal VM is brought out
to a pin for gain selection. External resistors connected
between VOUT and VM (RA) and VM to ground (RB) will set
the gain of this amplifier.
Gain = 1 + RA/RB
The amplifier is not unity gain stable; a minimum gain of
two is required. The output amplifier has a bandwidth of
20MHz with a gain of 2. For increased gain applications,
the bandwidth is reduced according to the formula:
Bandwidth = 40MHz/(Gain) = 40MHz • RB/(RA + RB)
For stable operation the gain setting resistors should be
low values and the board capacitance on VM should be
minimized. RB is recommended to be no greater than
500Ω for all gain settings.
The VOS input controls the DC input voltage to the output
amplifier. VOS must be connected to ground if the DC
output voltage is not to be changed. The output amplifier
is initially trimmed to 200mV (Gain = 2) with VOS con-
nected to ground.
The VOS pin is used to change the initial VOUT starting
voltage. This function, in combination with gain adjust-
ment enables the LTC5535 output to span the input range
of a variety of analog-to-digital converters. VOUT will not
change until VOS exceeds 200mV. The starting voltage at
VOUT for VOS >200mV is:
VOUT = 0.5 • VOS • Gain
where gain is the output amplifier gain. For a gain of 2,
VOUT will exactly track VOS above 200mV.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The Schottky diode is biased at about 50µA and drives a
5pF internal peak detector capacitor.
RFIN
GND
VOS
VCC
VOUT
VM
LTC5535ES6
1
2
3
6
5
4
C4
39pF
RFIN
R1
(OPT)
OFFSET
ADJUSTMENT
C2
100pF
C1
0.1µF
RLOAD
(OPT)
VCC
2.7V TO 5.5V
VOUT
GND
R2
500Ω
1%
R3
500Ω
1%
5535 DB
Demo Board Schematic


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