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LTC4352CMS-TRPBF Datasheet(PDF) 3 Page - Linear Technology

Part # LTC4352CMS-TRPBF
Description  Low Voltage Ideal Diode Controller with Monitoring
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTC4352CMS-TRPBF Datasheet(HTML) 3 Page - Linear Technology

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LTC4352
3
4352f
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 12V, VSOURCE = VIN, VOUT = VIN, VCC Open, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Supplies
VIN
Input Operating Range
With External 2.9V to 4.7V VCC Supply
With External 4.7V to 6V VCC Supply
l
l
l
2.9
0
0
18
VCC
18
V
V
V
VCC(EXT)
VCC External Supply Range
l
2.9
6
V
VCC(INT)
VCC Internal Regulator Voltage
l
3.5
4.1
4.7
V
IIN
VIN Supply Current
VIN = 0V, VCC = 5V, VOUT = 18V
l
l
1.4
–10
3
–13
mA
μA
ICC
External VCC Supply Current
VCC = 5V, VIN = 0V
l
1.25
2.5
mA
VCC(UVLO)
VCC Undervoltage Lockout Threshold
VCC Rising
l
2.45
2.57
2.7
V
ΔVCC(HYST)
VCC Undervoltage Lockout Hysteresis
l
50
70
90
mV
Ideal Diode Control
VFWD(REG)
Forward Regulation Voltage (VIN − VOUT)
l
10
25
40
mV
ΔVGATE
MOSFET Gate Drive (VGATE – VSOURCE)VFWD = 0.1V, I = 0 and –1μA
l
56.1
7.5
V
tON(GATE)
GATE Turn-On Delay
CGATE = 10nF, VFWD = 0.2V
l
0.25
0.5
μs
tOFF(GATE)
GATE Turn-Off Delay
CGATE = 10nF, VFWD = −0.2V
l
0.2
0.5
μs
Input/Output Pins
VUV,OV(TH)
UV, OV Threshold Voltage
VUV Falling, VOV Rising
l
490
500
510
mV
ΔVUV,OV(HYST)
UV, OV Threshold Hysteresis
l
2.5
5
8.5
mV
VREV(TH)
REV Threshold Voltage
l
0.8
1.0
1.2
V
IUV,OV
UV, OV Current
V = 0.5V
l
0±1
μA
IREV
REV Current
VREV = 1V
l
710
13
μA
IOUT
OUT Current
VOUT = 0V, 12V
l
–13
200
μA
ISOURCE
SOURCE Current
VSOURCE = 0V
l
–85
–130
μA
ICPO(UP)
CPO Pull-Up Current
VCPO = VIN = 2.9V
VCPO = VIN = 18V
l
l
–60
–50
–90
–75
–115
–100
μA
μA
IGATE
GATE Fast Pull-Up Current
GATE Fast Pull-Down Current
GATE Off Pull-Down Current
VFWD = 0.2V, ΔVGATE = 0V, VCPO = 17V
VFWD = –0.2V, ΔVGATE = 5V
VUV = 0V, ΔVGATE = 2.5V
l
60
–1.5
1.5
100
145
A
A
μA
IFLT,STAT(IN)
STATUS, FAULT Leakage Current
V = 18V
l
0±1
μA
IFLT,STAT(UP)
STATUS, FAULT Pull-Up Current
V = 0V
l
–8
–10
–12
μA
VOL
STATUS, FAULT Output Low Voltage
I = 1.25mA
l
0.2
0.4
V
VOH
STATUS, FAULT Output High Voltage
I = –1μA
l
VCC – 1 VCC – 0.5
V
ΔVGATE(ST)
MOSFET On Detect Threshold
STATUS Pulls Low, VFWD = 50mV
l
0.3
0.7
1.1
V
VFWD(FLT)
Open MOSFET Threshold (VIN – VOUT)
FAULT Pulls Low
l
200
250
300
mV
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating for extended periods may affect device reliability and
lifetime.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to GND unless otherwise
specified.
Note 3: Internal clamps limit the GATE and CPO pins to a minimum of 5V
above, and a diode below SOURCE. Driving these pins to voltages beyond
the clamp may damage the device.


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