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TSAL6100 Datasheet(PDF) 1 Page - Vishay Siliconix |
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TSAL6100 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page TSAL6100 Vishay Telefunken 1 (5) Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 Document Number 81009 GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1 ¾) Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, blue- grey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters. Features D Extra high radiant power and radiant intensity D High reliability D Low forward voltage D Suitable for high pulse current operation D Standard T–1¾ (ø 5 mm) package D Angle of half intensity ϕ = ± 10° D Peak wavelength lp = 940 nm D Good spectral matching to Si photodetectors 94 8389 Applications Infrared remote control units with high power requirements Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectors Absolute Maximum Ratings Tamb = 25_C Parameter Test Conditions Symbol Value Unit Reverse Voltage VR 5 V Forward Current IF 100 mA Peak Forward Current tp/T = 0.5, tp = 100 ms IFM 200 mA Surge Forward Current tp = 100 ms IFSM 1.5 A Power Dissipation PV 210 mW Junction Temperature Tj 100 °C Operating Temperature Range Tamb –55...+100 °C Storage Temperature Range Tstg –55...+100 °C Soldering Temperature t x 5sec, 2 mm from case Tsd 260 °C Thermal Resistance Junction/Ambient RthJA 350 K/W |
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