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TSAL5300 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. TSAL5300
Description  High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSAL5300 Datasheet(HTML) 1 Page - Vishay Siliconix

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TSAL5300
Document Number 81008
Rev. 1.7, 08-Mar-05
Vishay Semiconductors
www.vishay.com
1
96 11505
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSAL5300 is a high efficiency infrared emitting diode
in GaAs technology, molded in clear, bluegrey tinted
plastic packages.
Features
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ (
∅ 5 mm) package
• Angle of half intensity
ϕ = ± 22°
• Peak wavelength
λp = 940 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to ELV 2000/53/EC,
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
Infrared remote control units with high power require-
ments
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part
Ordering Code
Remarks
TSAL 5300
TSAL5300
MOQ 4000 pc (Bulk)
TSAL 5300
TSAL5300-FSZ
MOQ 5000 pc (1000 pc / Ammopack)
TSAL 5300
TSAL5300-GSZ
MOQ 5000 pc (1000 pc / Ammopack)
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
VR
5V
Forward current
IF
100
mA
Peak Forward Current
tp/T = 0.5, tp = 100 µsIFM
200
mA
Surge Forward Current
tp = 100 µsIFSM
1.5
A
Power Dissipation
PV
210
mW
Junction Temperature
Tj
100
°C
Operating Temperature Range
Tamb
- 55 to + 100
°C
Storage Temperature Range
Tstg
- 55 to + 100
°C
Soldering Temperature
t
≤ 5 sec, 2 mm from case
Tsd
260
°C
Thermal Resistance Junction/
Ambient
RthJA
350
K/W
e2


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