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TSAL5100 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. TSAL5100
Description  High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
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TSAL5100 Datasheet(HTML) 1 Page - Vishay Siliconix

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TSAL5100
Document Number 81007
Rev. 1.3, 08-Mar-05
Vishay Semiconductors
www.vishay.com
1
96 11505
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSAL5100 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, blue-
grey tinted plastic packages.
In comparison with the standard GaAs on GaAs tech-
nology these emitters achieve more than 100 % radi-
ant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
• Extra high radiant power and radiant intensity
• High reliability
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ (
∅ 5 mm) package
• Angle of half intensity
ϕ = ± 10°
• Peak wavelength
λ
p = 940 nm
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared remote control units with high power require-
ments
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
VR
5V
Forward current
IF
100
mA
Peak Forward Current
tp/T = 0.5, tp = 100 µsIFM
200
mA
Surge Forward Current
tp = 100 µsIFSM
1.5
A
Power Dissipation
PV
210
mW
Junction Temperature
Tj
100
°C
Operating Temperature Range
Tamb
- 55 to + 100
°C
Storage Temperature Range
Tstg
- 55 to + 100
°C
Soldering Temperature
t
≤ 5 sec, 2 mm from case
Tsd
260
°C
Thermal Resistance Junction/
Ambient
RthJA
350
K/W


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