AO5600E datasheet(2/9 Pages) AOSMD

Part #	AO5600E

Description	Complementary Enhancement Mode Field Effect Transistor

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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AO5600E

Symbol

Min

Typ

Max

Units

BVDSS

20

V

1

TJ=55°C

5

±1

µA

±100

µA

VGS(th)

0.45

0.6

1

V

ID(ON)

3A

0.54

0.65

TJ=125°C

0.81

1

0.63

0.75

Ω

0.73

0.95

Ω

gFS

1.5

S

VSD

0.65

1

V

IS

0.4

A

Ciss

35

45

pF

Coss

8pF

Crss

6pF

Qg

0.63

1

nC

Qgs

0.08

nC

Qgd

0.16

nC

tD(on)

4.5

ns

tr

3.3

ns

tD(off)

70

ns

tf

35

ns

trr

8

10

ns

Qrr

2

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

IF=0.5A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=0.5A, dI/dt=100A/µs

VGS=5V, VDS=10V, RL=50Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

SWITCHING PARAMETERS

VGS=4.5V, VDS=10V, ID=0.5A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

IGSS

Gate-Body leakage current

On state drain current

RDS(ON)

Static Drain-Source On-Resistance

Gate Threshold Voltage

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=20V, VGS=0V

N-channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

µΑ

VDS=0V, VGS=±4.5V

VDS=0V, VGS=±8V

VDS=VGS ID=250µA

VGS=4.5V, ID=0.5A

Ω

VGS=2.5V, ID=0.5A

VGS=1.8V, ID=0.3A

VGS=4.5V, VDS=5V

Maximum Body-Diode Continuous Current

IS=0.1A,VGS=0V

VGS=0V, VDS=10V, f=1MHz

Forward Transconductance

VDS=5V, ID=0.5A

Diode Forward Voltage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

DYNAMIC PARAMETERS

A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are

based on TJ(MAX)=150°C, using the steady state junction-to-ambient thermal resistance.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.

G. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

H. The maximum current rating is limited by bond-wires.

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t

≤

10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

F. The maximum current rating is limited by bond-wires

Rev5: Oct 2008

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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