Feb.1999

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

CT20VSL-8

STROBE FLASHER USE

160

120

80

40

0

16

12

4

08

<

<

µF

RECOMMEND CONDITION

µF

MAXIMUM CONDITION

350V

130A

400

µF

IXe

Vtrig

IGBT

+

Vtrig

Ixe

–

MAXIMUM PULSE COLLECTOR CURRENT

TRIGGER

SIGNAL

Xe TUBE

CURRENT

VOLTAGE

IGBT GATE

PERFORMANCE CURVES

APPLICATION EXAMPLE

Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.

And reverse gate current during turn-off must be kept less than 0.5A.

≥ 47Ω)

Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.

So please handle carefully not to suffer from electrostatic charge.

Notice 3. The operation life should be endured 5,000 shots under the charge current

Repetition period under full luminescence condition is over 3 seconds.

Notice 4. Total operation hours must be applied within 5,000 hours.

Figure 1