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2SA1693 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1693 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1693 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.5 V ICBO Collector Cutoff Current VCB= -80V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -2A ; VCE= -4V 50 180 COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 150 pF fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 20 MHz Switching Times ton Turn-on Time 0.18 μs tstg Storage Time 1.1 μs tf Fall Time IC= -3A ,RL= 10Ω, IB1= -IB2= -0.3A,VCC= -30V 0.21 μs hFE Classifications O P Y 50-100 70-140 90-180 2 |
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