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2SA1670 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1670 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1670 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A B -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-2A ; VCE=-4V 50 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz Switching times ton Turn-on time 0.25 μs tstg Storage time 0.5 μs tf Fall time IC=-3A;RL=10Ω IB1=-IB2=-0.3A VCC=-30V 0.1 μs 2 |
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