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2SA1451 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1451 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1451 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -50 V VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-0.3A B -0.15 -0.4 V VBEsat Base-emitter saturation voltage IC=-6A ;IB=-0.3A B -0.9 -1.2 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 240 hFE-2 DC current gain IC=-6A ; VCE=-1V 40 fT Transition frequency IC=-1A ; VCE=-5V 70 MHz Cob Collector output capacitance IE=0; VCE=-10V;f=1MHz 320 pF Switching times ton Turn-on time 0.3 μs ts Storage time 1.0 μs tf Fall time IB1=-IB2=-0.3A VCC≈-30V;RL=5Ω 0.5 μs hFE-1 Classifications O Y 70-140 120-240 2 |
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