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2SA1292 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part No. 2SA1292
Description  Silicon PNP Power Transistors
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1292 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA1292 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA1292 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SA1292 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1292
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ,IE=0
-80
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ,IB=0
B
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ,IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-7.5A; IB=-0.375A
-0.4
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-100
μA
hFE
DC current gain
IC=-1A ; VCE=-2V
70
280
fT
Transition frequency
IC=-1A ; VCE=-5V
100
MHz
Switching times
ton
Turn-on time
0.1
μs
ts
Storage time
0.5
μs
tf
Fall time
IC=-6A IB1=- IB2=-0.3A
VCC=-20V;RL=3.3Ω
0.1
μs
hFE Classifications
Q
R
S
70-140
100-200
140-280
2


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