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2SA756 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part No. 2SA756
Description  Silicon PNP Power Transistors
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Maker  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA756 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA756 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA756 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SA756 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA756
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;RBE=∞
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA ,IE=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-5mA ,IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-1A
-1.8
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-30V; IE=0
-1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
35
200
hFE-2
DC current gain
IC=-5A ; VCE=-5V
20
fT
Transition frequency
IC=-1A ; VCE=-5V
20
MHz
hFE-1 Classifications
A
B
C
35-70
60-120
100-200
2


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