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2SA756 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA756 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA756 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞ -80 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ,IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-30V; IE=0 -1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 35 200 hFE-2 DC current gain IC=-5A ; VCE=-5V 20 fT Transition frequency IC=-1A ; VCE=-5V 20 MHz hFE-1 Classifications A B C 35-70 60-120 100-200 2 |
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