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TCET1100 Datasheet(PDF) 5 Page - Vishay Siliconix

Part No. TCET1100
Description  Optocoupler with Phototransistor Output
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TCET1100 Datasheet(HTML) 5 Page - Vishay Siliconix

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TCET110.(G) up to TCET4100
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Document Number 83503
Rev. A6, 08–Sep–99
5 (11)
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
Isi
130
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
Tamb ≤ 25°C
Psi
265
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
VIOTM
8
kV
Safety temperature
Tsi
150
°C
Insulation Rated Parameters (according to VDE 0884)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Partial discharge test voltage –
Routine test
100%, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage –
tTr = 60 s, ttest = 10 s,
VIOTM
8
kV
gg
Lot test (sample test)
Tr
test
(see figure 2)
Vpd
1.3
kV
Insulation resistance
VIO = 500 V
RIO
1012
W
VIO = 500 V,
Tamb = 100°C
RIO
1011
W
VIO = 500 V,
Tamb = 150°C
(construction test only)
RIO
109
W
0
25
50
75
125
0
50
100
150
200
300
Tsi – Safety Temperature ( °C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 1. Derating diagram
t
13930
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
VPd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s
tstres
t3
t4
t2
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884


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