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TCDT1120 Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. TCDT1120
Description  Optocoupler with Phototransistor Output
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TCDT1120 Datasheet(HTML) 4 Page - Vishay Siliconix

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Document Number 83532
Rev. 1.6, 26-Oct-04
TCDT1120/ TCDT1120G
Vishay Semiconductors
Coupler
Insulation Rated Parameters
Switching Characteristics
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Rated impulse voltage
VIOTM
6kV
Safety temperature
Tsi
150
°C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Partial discharge test voltage -
Routine test
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage -
Lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
6kV
Vpd
1.3
kV
Insulation resistance
VIO = 500 V
RIO
1012
VIO = 500 V, Tamb ≤ 100 °C
RIO
1011
VIO = 500 V, Tamb ≤ 150 °C
(construction test only)
RIO
109
Figure 1. Derating diagram
0
50
100
150
200
250
300
0
25
50
75
100 125 150 175 200
Tamb(°C )
95 10934
Psi (mW)
Isi (mA)
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
t
13930
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
VPd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s
tstres
t3
t4
t2
Parameter
Current
Delay
Rise time
Storage
Fall time
Turn-on
time
Turn-off
time
Turn-on
time
Turn-off
time
Test condition
VS = 5 V, RL = 100 Ω
(see figure 3)
VS = 5 V, RL = 1 kΩ
(see figure 4)
Symbol
IF
tD
tr
tS
tf
ton
toff
ton
toff
Unit
mA
µs
µs
µs
µs
µs
µs
µs
µs
TCDT1120
TCDT1120G
10
2.5
3.0
0.3
3.7
5.5
4.0
16.5
22.5
10
2.5
3.0
0.3
3.7
5.5
4.0
16.5
22.5
TCDT1123
TCDT1123G
10
2.8
4.2
0.3
4.7
7.0
5.0
21.5
37.5
TCDT1124
TCDT1124G
10
2.0
4.0
0.3
4.7
6.0
5.0
20.0
50.0


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