 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
TCDT1120 Datasheet(PDF) 4 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
TCDT1120 Datasheet(HTML) 4 Page - Vishay Siliconix |
|
|
4 / 10 page 
www.vishay.com 4 Document Number 83532 Rev. 1.6, 26-Oct-04 TCDT1120/ TCDT1120G Vishay Semiconductors Coupler Insulation Rated Parameters Switching Characteristics Parameter Test condition Symbol Min Typ. Max Unit Rated impulse voltage VIOTM 6kV Safety temperature Tsi 150 °C Parameter Test condition Symbol Min Typ. Max Unit Partial discharge test voltage - Routine test 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage - Lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 6kV Vpd 1.3 kV Insulation resistance VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb ≤ 100 °C RIO 1011 Ω VIO = 500 V, Tamb ≤ 150 °C (construction test only) RIO 109 Ω Figure 1. Derating diagram 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 200 Tamb(°C ) 95 10934 Psi (mW) Isi (mA) Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 t 13930 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VIOTM VPd VIOWM VIORM 0 t1 ttest tTr = 60 s tstres t3 t4 t2 Parameter Current Delay Rise time Storage Fall time Turn-on time Turn-off time Turn-on time Turn-off time Test condition VS = 5 V, RL = 100 Ω (see figure 3) VS = 5 V, RL = 1 kΩ (see figure 4) Symbol IF tD tr tS tf ton toff ton toff Unit mA µs µs µs µs µs µs µs µs TCDT1120 TCDT1120G 10 2.5 3.0 0.3 3.7 5.5 4.0 16.5 22.5 10 2.5 3.0 0.3 3.7 5.5 4.0 16.5 22.5 TCDT1123 TCDT1123G 10 2.8 4.2 0.3 4.7 7.0 5.0 21.5 37.5 TCDT1124 TCDT1124G 10 2.0 4.0 0.3 4.7 6.0 5.0 20.0 50.0 |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
