4

LTC1419

1419fb

Note 6: Linearity, offset and full-scale specifications apply for a single-

Note 7: Integral nonlinearity is defined as the deviation of a code from a

straight line passing through the actual endpoints of the transfer curve.

The deviation is measured from the center of the quantization band.

Note 8: Bipolar offset is the offset voltage measured from – 0.5LSB

when the output code flickers between 0000 0000 0000 00 and

1111 1111 1111 11.

Note 9: Guaranteed by design, not subject to test.

Note 10: Recommended operating conditions.

Note 11: The falling edge of CONVST starts a conversion. If CONVST

returns high at a critical point during the conversion it can create small

errors. For best performance ensure that CONVST returns high either

within 650ns after the start of the conversion or after BUSY rises.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Power Dissipation

●

150

240

mW

Nap Mode

SHDN = 0V, CS = 0V

7.5

12

mW

Sleep Mode

SHDN = 0V, CS = 5V

1.2

mW

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Maximum Sampling Frequency

●

800

kHz

Conversion Time

●

950

1150

ns

Acquisition Time

●

90

300

ns

Acquisition + Conversion Time

●

1040

1250

ns

CS to RD Setup Time

(Notes 9, 10)

●

0ns

CS

↓ to CONVST↓ Setup Time

(Notes 9, 10)

●

40

ns

CS

↓ to SHDN↓ Setup Time

(Notes 9, 10)

40

ns

SHDN

↑ to CONVST↓ Wake-Up Time (Note 10)

400

ns

CONVST Low Time

(Notes 10, 11)

●

40

ns

CONVST to BUSY Delay

20

ns

●

50

ns

Data Ready Before BUSY

↑

20

50

ns

●

15

ns

Delay Between Conversions

(Note 10)

●

40

ns

Wait Time RD

↓ After BUSY↑

(Note 9)

●

–5

ns

Data Access Time After RD

↓

15

25

ns

●

35

ns

20

35

ns

●

50

ns

Bus Relinquish Time

10

20

ns

0

●

25

ns

–40

●

30

ns

RD Low Time

●

ns

CONVST High Time

●

40

ns

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliabilty and lifetime.

Note 2: All voltage values are with respect to ground with DGND and

AGND wired together unless otherwise noted.

will be clamped by internal diodes. This product can handle input currents

by internal diodes. This product can handle input currents greater than

otherwise specified.

The

POWER REQUIRE E TS

The

TI I G CHARACTERISTICS